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Journal description
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Details for article 60 of 111 found articles
| Title: |
Influence of phosphorus diffusion on the SiO2/4H-SiC (0001) interface during poly gate formation process |
| Author: |
Wan, Caiping Zhang, Yuanhao Lu, Wenhao Ge, Niannian Xu, Hengyu Ye, Tianchun |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 126 () nr. C pages p. |
| Year: |
2021 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 60 of 111 found articles
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