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Journal description
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Details for article 32 of 32 found articles
| Title: |
1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect |
| Author: |
Fu, Hao Wei, Zhaoxiang Liu, Siyang Wei, Jiaxing Xu, Hang Ni, Lihua Yang, Zhuo Sun, Weifeng |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 123 () nr. C pages p. |
| Year: |
2021 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 32 of 32 found articles
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