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                                       Details for article 16 of 32 found articles
 
 
  Influence of ionisation track structure on 20 nm FDSOI transistor
 
 
Title: Influence of ionisation track structure on 20 nm FDSOI transistor
Author: Zhang, Hao
Liu, Hongxia
Pan, Ziwen
Chen, Shupeng
Chen, Ruibo
Appeared in: Microelectronics reliability
Paging: Volume 123 () nr. C pages p.
Year: 2021
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 16 of 32 found articles
 
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