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                                       Details for article 13 of 22 found articles
 
 
  Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO2/Al2O3 laterally stacked gate oxide
 
 
Title: Impact of interface trap charges on electrical performance characteristics of a source pocket engineered Ge/Si heterojunction vertical TFET with HfO2/Al2O3 laterally stacked gate oxide
Author: Tripathy, Manas Ranjan
Samad, A.
Singh, Ashish Kumar
Singh, Prince Kumar
Baral, Kamalaksha
Mishra, Ashwini Kumar
Jit, Satyabrata
Appeared in: Microelectronics reliability
Paging: Volume 119 () nr. C pages p.
Year: 2021
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 13 of 22 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands