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Journal description
All volumes of the corresponding journal
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Details for article 14 of 14 found articles
| Title: |
The role of SiN/GaN cap interface charge and GaN cap layer to achieve enhancement mode GaN MIS-HEMT operation |
| Author: |
Ahmeda, K. Ubochi, B. Alqaysi, M.H. Al-Khalidi, A. Wasige, E. Kalna, K. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 115 () nr. C pages p. |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 14 of 14 found articles
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