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                                       Details for article 4 of 175 found articles
 
 
  AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology
 
 
Title: AC stress reliability study on a novel vertical MOS transistor for non-volatile memory technology
Author: Locati, J.
Della Marca, V.
Rivero, C.
Fornara, P.
Regnier, A.
Niel, S.
CouliƩ, K.
Appeared in: Microelectronics reliability
Paging: Volume 114 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 175 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands