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                                       Details for article 5 of 14 found articles
 
 
  Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs
 
 
Title: Correlation between OCVD carrier lifetime vs temperature measurements and reverse recovery behavior of the body diode of SiC power MOSFETs
Author: Sapienza, S.
Sozzi, G.
Santoro, D.
Cova, P.
Delmonte, N.
Verrini, G.
Chiorboli, G.
Appeared in: Microelectronics reliability
Paging: Volume 113 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 14 found articles
 
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