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Journal description
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Details for article 3 of 13 found articles
| Title: |
Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes |
| Author: |
Li, Pei He, ChaoHui Guo, HongXia Zhang, JinXin Li, YongHong Wei, JiaNan |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 103 () nr. C pages p. |
| Year: |
2019 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 13 found articles
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