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  Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress
 
 
Title: Degradation in electrothermal characteristics of 4H-SiC junction barrier Schottky diodes under high temperature power cycling stress
Author: Tang, Yidan
Ge, Lan
Gu, Hang
Bai, Yun
Luo, Yafei
Li, Chengzhan
Liu, Xinyu
Appeared in: Microelectronics reliability
Paging: Volume 102 (2019) nr. C pages p.
Year: 2019
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 5 of 25 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands