Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 12 of 25 found articles
 
 
  Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation
 
 
Title: Investigating the latent reliability degradation of partially depleted SOI devices induced by high-energy heavy ions irradiation
Author: Ma, Teng
Yu, Xuefeng
Paccagnella, Alessandro
Guo, Qi
Appeared in: Microelectronics reliability
Paging: Volume 102 (2019) nr. C pages p.
Year: 2019
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 25 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands