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                                       Details for article 660 of 2999 found articles
 
 
  Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
 
 
Title: Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs
Author: Masin, F.
De Santi, C.
Lettens, J.
Geenen, F.
Meneghesso, G.
Zanoni, E.
Moens, P.
Meneghini, M.
Appeared in: Microelectronics reliability
Paging: Volume 138 () nr. C pages p.
Year: 2022
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 660 of 2999 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands