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Journal description
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Details for article 564 of 2999 found articles
| Title: |
Comparison of electrical characteristics between AlGaN/GaN and lattice-matched InAlN/GaN heterostructure Schottky barrier diodes |
| Author: |
Ren, Jian Yan, Dawei Zhai, Yang Mou, Wenjie Gu, Xiaofeng |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 61 (2016) nr. C pages 5 p. |
| Year: |
2016 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 564 of 2999 found articles
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