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                                       Details for article 300 of 2989 found articles
 
 
  A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier
 
 
Title: A novel p-GaN HEMT with AlInN/AlN/GaN double heterostructure and InAlGaN back-barrier
Author: Garg, Tanvika
Kale, Sumit
Appeared in: Microelectronics reliability
Paging: Volume 145 () nr. C pages p.
Year: 2023
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 300 of 2989 found articles
 
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