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Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications |
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Titel: |
Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications |
Auteur: |
Fleury, Clément Zhytnytska, Rimma Bychikhin, Sergey Cappriotti, Mattia Hilt, Oliver Visalli, Domenica Meneghesso, Gaudenzio Zanoni, Enrico Würfl, Joachim Derluyn, Joff Strasser, Gottfried Pogany, Dionyz |
Verschenen in: |
Microelectronics reliability |
Paginering: |
Jaargang 53 (2013) nr. 9-11 pagina's 6 p. |
Jaar: |
2013 |
Inhoud: |
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Uitgever: |
Elsevier Ltd |
Bronbestand: |
Elektronische Wetenschappelijke Tijdschriften |
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