|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 15 of 87 found articles
| Title: |
Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices |
| Author: |
Soelkner, Gerald Kreutle, Johannes Quincke, Jörg Kaindl, Winfried Wachutka, Gerhard |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 40 (2000) nr. 8-10 pages 5 p. |
| Year: |
2000 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 15 of 87 found articles
| << previous | next >> |