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Journal description
All volumes of the corresponding journal
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All articles of the corresponding issues
Details for article 395 of 425 found articles
| Title: |
The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices |
| Author: |
Innertsberger, G Pompl, T Kerber, M |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 41 (2001) nr. 7 pages 3 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 395 of 425 found articles
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