|
| << previous | next >> |
Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 275 of 3078 found articles
| Title: |
Anomalous narrow width effect in p-channel metal–oxide–semiconductor surface channel transistors using shallow trench isolation technology |
| Author: |
Lau, W.S. See, K.S. Eng, C.W. Aw, W.K. Jo, K.H. Tee, K.C. Lee, James Y.M. Quek, Elgin K.B. Kim, H.S. Chan, Simon T.H. Chan, L. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 48 (2008) nr. 6 pages 4 p. |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 275 of 3078 found articles
| << previous | next >> |