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Details for article 999 of 3051 found articles
| Title: |
Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide |
| Author: |
Lee, Chihoon Park, Donggun Kim, Hyeong Joon Lee, Wonshik |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 43 (2003) nr. 5 pages 5 p. |
| Year: |
2003 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 999 of 3051 found articles
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