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Details for article 84 of 3051 found articles
| Title: |
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric |
| Author: |
Ji, F. Xu, J.P. Lai, P.T. Guan, J.G. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 48 (2008) nr. 5 pages 5 p. |
| Year: |
2008 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 84 of 3051 found articles
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