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Details for article 287 of 4365 found articles
| Title: |
An analytical two dimensional subthreshold behavior model to study the nanoscale GCGS DG Si MOSFET including interfacial trap effects |
| Author: |
Bentrcia, T. Djeffal, F. Chahdi, M. |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 53 (2013) nr. 4 pages 8 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 287 of 4365 found articles
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