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Journal description
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Details for article 464 of 2875 found articles
| Title: |
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress |
| Author: |
Lee, Yi-Mu Wu, Yider Lucovsky, Gerald |
| Appeared in: |
Microelectronics reliability |
| Paging: | Volume 44 (2004) nr. 2 pages 6 p. |
| Year: |
2004 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 464 of 2875 found articles
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