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                                       Details for article 673 of 3138 found articles
 
 
  Control of boron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices
 
 
Title: Control of boron diffusion in polysilicon for constructing overlapping polysilicon gate charge-coupled devices
Author: Srivastava, A.
Boyd, J.T.
Appeared in: Microelectronics reliability
Paging: Volume 23 (1983) nr. 1 pages 3 p.
Year: 1983
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 673 of 3138 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands