Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations
Titel:
Ultrathin (5nm) SiGe-On-Insulator with high compressive strain (−2GPa): From fabrication (Ge enrichment process) to in-depth characterizations
Auteur:
Glowacki, F. Le Royer, C. Morand, Y. Pédini, J.-M. Denneulin, T. Cooper, D. Barnes, J.-P. Nguyen, P. Rouchon, D. Hartmann, J.-M. Gourhant, O. Baylac, E. Campidelli, Y. Barge, D. Bonnin, O. Schwarzenbach, W.