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                                       Details for article 22 of 26 found articles
 
 
  Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
 
 
Title: Optimized design of Si-cap layer in strained-SiGe channel p-MOSFETs based on computational and experimental approaches
Author: Sato-Iwanaga, Junko
Inoue, Akira
Sorada, Haruyuki
Takagi, Takeshi
Rothschild, Aude
Loo, Roger
Biesemans, Serge
Ito, Choshu
Liu, Yang
Dutton, Robert W.
Tsuchiya, Hideaki
Appeared in: Solid-state electronics
Paging: Volume 91 (2014) nr. C pages 8 p.
Year: 2014
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 26 found articles
 
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