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                                       Details for article 15 of 31 found articles
 
 
  In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
 
 
Title: In0.53Ga0.47As FinFETs with self-aligned molybdenum contacts and HfO2/Al2O3 gate dielectric
Author: Zhang, Xingui
Guo, Hua Xin
Zhu, Zhu
Gong, Xiao
Yeo, Yee-Chia
Appeared in: Solid-state electronics
Paging: Volume 84 (2013) nr. C pages 7 p.
Year: 2013
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 15 of 31 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands