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Journal description
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Details for article 4 of 22 found articles
| Title: |
Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method |
| Author: |
Usuda, Koji Tezuka, Tsutomu Kosemura, Daisuke Tomita, Motohiro Ogura, Atsushi |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 83 (2013) nr. C pages 4 p. |
| Year: |
2013 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 22 found articles
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