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                                       Details for article 10 of 22 found articles
 
 
  Epitaxial growth and anisotropic strain relaxation of Ge1− x Sn x layers on Ge(110) substrates
 
 
Title: Epitaxial growth and anisotropic strain relaxation of Ge1− x Sn x layers on Ge(110) substrates
Author: Asano, Takanori
Shimura, Yosuke
Taoka, Noriyuki
Nakatsuka, Osamu
Zaima, Shigeaki
Appeared in: Solid-state electronics
Paging: Volume 83 (2013) nr. C pages 5 p.
Year: 2013
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 10 of 22 found articles
 
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