LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process
Titel:
LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process
Auteur:
Nichau, A. Durğun Özben, E. Schnee, M. Lopes, J.M.J. Besmehn, A. Luysberg, M. Knoll, L. Habicht, S. Mussmann, V. Luptak, R. Lenk, St. Rubio-Zuazo, J. Castro, G.R. Buca, D. Zhao, Q.T. Schubert, J. Mantl, S.