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                                       Details for article 8 of 35 found articles
 
 
  Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
 
 
Title: Comparative study of AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide
Author: Miyazaki, Eiji
Goda, Yuji
Kishimoto, Shigeru
Mizutani, Takashi
Appeared in: Solid-state electronics
Paging: Volume 62 (2011) nr. 1 pages 4 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 35 found articles
 
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