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                                       Details for article 21 of 35 found articles
 
 
  Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment
 
 
Title: Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment
Author: Yang, Po-Chun
Chang, Ting-Chang
Chen, Shih-Ching
Su, Hsuan-Hsiang
Lu, Jin
Huang, Hui-Chun
Gan, Der-Shin
Ho, New-Jin
Appeared in: Solid-state electronics
Paging: Volume 62 (2011) nr. 1 pages 4 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 21 of 35 found articles
 
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