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Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs |
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Title: |
Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs |
Author: |
Jousseaume, V. Fantini, A. Nodin, J.F. Guedj, C. Persico, A. Buckley, J. Tirano, S. Lorenzi, P. Vignon, R. Feldis, H. Minoret, S. Grampeix, H. Roule, A. Favier, S. Martinez, E. Calka, P. Rochat, N. Auvert, G. Barnes, J.P. Gonon, P. Vallée, C. Perniola, L. De Salvo, B. |
Appeared in: |
Solid-state electronics |
Paging: |
Volume 58 (2011) nr. 1 pages 6 p. |
Year: |
2011 |
Contents: |
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Publisher: |
Elsevier Ltd |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
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