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                                       Details for article 3 of 15 found articles
 
 
  Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs
 
 
Title: Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMs
Author: Jousseaume, V.
Fantini, A.
Nodin, J.F.
Guedj, C.
Persico, A.
Buckley, J.
Tirano, S.
Lorenzi, P.
Vignon, R.
Feldis, H.
Minoret, S.
Grampeix, H.
Roule, A.
Favier, S.
Martinez, E.
Calka, P.
Rochat, N.
Auvert, G.
Barnes, J.P.
Gonon, P.
Vallée, C.
Perniola, L.
De Salvo, B.
Appeared in: Solid-state electronics
Paging: Volume 58 (2011) nr. 1 pages 6 p.
Year: 2011
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 3 of 15 found articles
 
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