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Journal description
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Details for article 2 of 13 found articles
| Title: |
Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric |
| Author: |
Basu, Sarbani Singh, Pramod K. Sze, Po-Wen Wang, Yeong-Her |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 54 (2010) nr. 8 pages 6 p. |
| Year: |
2010 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 13 found articles
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