|
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures |
|
|
|
Title: |
Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures |
Author: |
Storm, D.F. Katzer, D.S. Deen, D.A. Bass, R. Meyer, D.J. Roussos, J.A. Binari, S.C. Paskova, T. Preble, E.A. Evans, K.R. |
Appeared in: |
Solid-state electronics |
Paging: |
Volume 54 (2010) nr. 11 pages 4 p. |
Year: |
2010 |
Contents: |
|
Publisher: |
Published by Elsevier B.V. |
Source file: |
Elektronische Wetenschappelijke Tijdschriften |
|
|
|
|