Digital Library
Close Browse articles from a journal
 
<< previous    next >>
     Journal description
       All volumes of the corresponding journal
         All issues of the corresponding volume
           All articles of the corresponding issues
                                       Details for article 31 of 43 found articles
 
 
  Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
 
 
Title: Proximity effects of beryllium-doped GaN buffer layers on the electronic properties of epitaxial AlGaN/GaN heterostructures
Author: Storm, D.F.
Katzer, D.S.
Deen, D.A.
Bass, R.
Meyer, D.J.
Roussos, J.A.
Binari, S.C.
Paskova, T.
Preble, E.A.
Evans, K.R.
Appeared in: Solid-state electronics
Paging: Volume 54 (2010) nr. 11 pages 4 p.
Year: 2010
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 31 of 43 found articles
 
<< previous    next >>
 
 Koninklijke Bibliotheek - National Library of the Netherlands