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Journal description
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Details for article 3 of 23 found articles
| Title: |
Doping profile dependence of the vertical impact ionization MOSFET’s (I-MOS) performance |
| Author: |
Abelein, Ulrich Assmuth, Andreas Iskra, Peter Schindler, Markus Sulima, Torsten Eisele, Ignaz |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 51 (2007) nr. 10 pages 7 p. |
| Year: |
2007 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 3 of 23 found articles
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