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  Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
 
 
Title: Accounting for quantum mechanical effects from accumulation to inversion, in a fully analytical surface-potential-based MOSFET model
Author: Prégaldiny, Fabien
Lallement, Christophe
Mathiot, Daniel
Appeared in: Solid-state electronics
Paging: Volume 48 (2004) nr. 5 pages 7 p.
Year: 2004
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

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