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                                       Details for article 2 of 74 found articles
 
 
  A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere
 
 
Title: A comparison of the AlN annealing cap for 4H–SiC annealed in nitrogen versus argon atmosphere
Author: Derenge, M.A.
Jones, K.A.
Kirchner, K.W.
Ervin, M.H.
Zheleva, T.S.
Hullavarad, S.
Vispute, R.D.
Appeared in: Solid-state electronics
Paging: Volume 48 (2004) nr. 10-11 pages 6 p.
Year: 2004
Contents:
Publisher: Published by Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 74 found articles
 
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