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                                       Details for article 4 of 23 found articles
 
 
  Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling
 
 
Title: Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling
Author: Li, P.W
Liao, W.M
Appeared in: Solid-state electronics
Paging: Volume 46 (2002) nr. 1 pages 6 p.
Year: 2002
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 23 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands