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                                       Details for article 8 of 26 found articles
 
 
  Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors
 
 
Title: Characteristics and comparison of In0.49Ga0.51P/InGaAs single and double delta-doped pseudomorphic high electron mobility transistors
Author: Lin, Kun-Wei
Yu, Kuo-Hui
Chang, Wen-Lung
Cheng, Chin-Chuan
Lin, Kuan-Po
Yen, Chih-Hung
Lour, Wen-Shiung
Liu, Wen-Chau
Appeared in: Solid-state electronics
Paging: Volume 45 (2001) nr. 2 pages 6 p.
Year: 2001
Contents:
Publisher: Elsevier Science Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 8 of 26 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands