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Journal description
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Details for article 10 of 19 found articles
| Title: |
Measurement and simulation of boron diffusion in strained Si1−x Ge x epitaxial layers with a linearly graded germanium profile |
| Author: |
Rajendran, K. Schoenmaker, W. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 45 (2001) nr. 11 pages 6 p. |
| Year: |
2001 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 19 found articles
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