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Journal description
All volumes of the corresponding journal
All issues of the corresponding volume
All articles of the corresponding issues
Details for article 12 of 47 found articles
| Title: |
Fabrication of p +-gate InAs-channel HEMT based on InP |
| Author: |
Koizumi, Ryoji Saitoh, Toshiya Yoh, Kanji |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 41 (1997) nr. 10 pages 3 p. |
| Year: |
1997 |
| Contents: | |
| Publisher: |
Elsevier Science Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 12 of 47 found articles
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