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Journal description
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Details for article 4 of 21 found articles
| Title: |
A new experimental determination of the relationship between the Hall mobility and the hole concentration in heavily doped p-type silicon |
| Author: |
Sasaki, Y. Itoh, K. Inoue, E. Kishi, S. Mitsuishi, T. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 31 (1988) nr. 1 pages 8 p. |
| Year: |
1988 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 4 of 21 found articles
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