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Journal description
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Details for article 17 of 20 found articles
| Title: |
The effect of high temperature annealing on the spatial variation of bulk lifetime near the SiSiO2 interface |
| Author: |
Manchanda, L. Vasi, J. Bhattacharyya, A.B. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 23 (1980) nr. 10 pages 6 p. |
| Year: |
1980 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 17 of 20 found articles
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