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                                       Details for article 25 of 25 found articles
 
 
  Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs
 
 
Title: Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs
Author: Singh, Khoirom Johnson
Acharya, Lomash Chandra
Bulusu, Anand
Dasgupta, Sudeb
Appeared in: Solid-state electronics
Paging: Volume 216 () nr. C pages p.
Year: 2024
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 25 of 25 found articles
 
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