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Journal description
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Details for article 2 of 11 found articles
| Title: |
Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs |
| Author: |
Yi, Boram Yang, Geun Soo Barraud, Sylvain Bervard, Laurent Lee, Jae Woo Yang, Ji-Woon |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 189 () nr. C pages p. |
| Year: |
2022 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 11 found articles
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