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                                       Details for article 12 of 16 found articles
 
 
  Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeV
 
 
Title: Ion implantation of aluminum in 4H-SiC epilayers from 90 keV to above 1 MeV
Author: Sang, Ling
Xia, Jinghua
Jin, Rui
Wang, Yaohua
Zha, Yiying
Yang, Fei
Wu, Junmin
Appeared in: Solid-state electronics
Paging: Volume 172 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 12 of 16 found articles
 
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 Koninklijke Bibliotheek - National Library of the Netherlands