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Journal description
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Details for article 10 of 16 found articles
| Title: |
Electron mobility of strained InGaAs long-channel MOSFETs: From scattering rates to TCAD model |
| Author: |
Carapezzi, Stefania Reggiani, Susanna Gnani, Elena Gnudi, Antonio |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 172 () nr. C pages p. |
| Year: |
2020 |
| Contents: | |
| Publisher: |
Elsevier Ltd |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 10 of 16 found articles
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