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                                       Details for article 4 of 26 found articles
 
 
  Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack
 
 
Title: Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack
Author: Lee, Tae Yoon
Lee, Seung Hwan
Son, Jun Woo
Lee, Sang Jae
Bong, Jae Hoon
Shin, Eui Joong
Kim, Sung Ho
Hwang, Wan Sik
Moon, Jung Min
Choi, Yang Kyu
Cho, Byung Jin
Appeared in: Solid-state electronics
Paging: Volume 164 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 4 of 26 found articles
 
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