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                                       Details for article 22 of 26 found articles
 
 
  Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs
 
 
Title: Tensile strain and Fermi level alignment in thermally grown TiO2 and Al2O3 based AlGaN/GaN MOS-HEMTs
Author: Rawat, Akanksha
Surana, Vivek Kumar
Ganguly, Swaroop
Saha, Dipankar
Appeared in: Solid-state electronics
Paging: Volume 164 () nr. C pages p.
Year: 2020
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 22 of 26 found articles
 
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