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Journal description
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Details for article 2 of 34 found articles
| Title: |
Analyses of transient capacitance experiments for AuGaAs Schottky barrier diodes in the presence of deep impurities and the interfacial layer |
| Author: |
Huang, Chern I. Li, Sheng S. |
| Appeared in: |
Solid-state electronics |
| Paging: | Volume 16 (1973) nr. 12 pages 6 p. |
| Year: |
1973 |
| Contents: | |
| Publisher: |
Published by Elsevier B.V. |
| Source file: |
Elektronische Wetenschappelijke Tijdschriften |
Details for article 2 of 34 found articles
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