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                                       Details for article 2 of 31 found articles
 
 
  Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
 
 
Title: Anisotropic interpolation method of silicon carbide oxidation growth rates for three-dimensional simulation
Author: Šimonka, Vito
Nawratil, Georg
Hössinger, Andreas
Weinbub, Josef
Selberherr, Siegfried
Appeared in: Solid-state electronics
Paging: Volume 128 (2017) nr. C pages 6 p.
Year: 2017
Contents:
Publisher: Elsevier Ltd
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 2 of 31 found articles
 
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